Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide

An advanced model taking into account formation of silicon clusters in the gas phase is employed for modeling analysis of CVD of SiC in commercial vertical rotating disc reactor. It has been found that two main parameters have significant influence on the nucleation and transport of the clusters in...

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Bibliographic Details
Published in:Journal of crystal growth 2000-04, Vol.211 (1), p.343-346
Main Authors: Vorob'ev, A.N, Karpov, S.Yu, Zhmakin, A.I, Lovtsus, A.A, Makarov, Yu.N, Krishnan, A
Format: Article
Language:English
Subjects:
Cluster
CVD
Growth rate
Nucleation
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Summary:An advanced model taking into account formation of silicon clusters in the gas phase is employed for modeling analysis of CVD of SiC in commercial vertical rotating disc reactor. It has been found that two main parameters have significant influence on the nucleation and transport of the clusters in the gas phase: input flow rate of silane and the temperature gradient near the growing surface determining the thermophoretic force. The results of modeling the deposition are in good agreement with experimental data. The silicon-to-carbon ratio in the gas phase over the SiC wafer is analyzed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00776-9