Loading…

Line broadening studies for isoelectronic divalent and trivalent lanthanides

Temperature-dependent line broadening measurements are reported for transitions on Sm 2+ and Eu 3+ (4f 6) and Eu 2+ and Gd 3+ (4f 7). Analysis of the results shows that the electron–phonon coupling parameter α ̄ derived from a fit of the line width data to a two-phonon Raman dephasing process are si...

Full description

Saved in:
Bibliographic Details
Published in:Journal of luminescence 2001-02, Vol.92 (3), p.189-197
Main Authors: Vink, A.P., Reijme, M.A., Meijerink, A.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Temperature-dependent line broadening measurements are reported for transitions on Sm 2+ and Eu 3+ (4f 6) and Eu 2+ and Gd 3+ (4f 7). Analysis of the results shows that the electron–phonon coupling parameter α ̄ derived from a fit of the line width data to a two-phonon Raman dephasing process are similar for the divalent and trivalent lanthanides. The low energy of the opposite parity 4f n−1 5d 1 state for the divalent lanthanides does not result in a significant difference in temperature-dependent line broadening. This indicates that an extrinsic Raman two-phonon dephasing process involving an opposite parity intermediate state is not responsible for the observed line broadening.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(00)00257-X