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Line broadening studies for isoelectronic divalent and trivalent lanthanides
Temperature-dependent line broadening measurements are reported for transitions on Sm 2+ and Eu 3+ (4f 6) and Eu 2+ and Gd 3+ (4f 7). Analysis of the results shows that the electron–phonon coupling parameter α ̄ derived from a fit of the line width data to a two-phonon Raman dephasing process are si...
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Published in: | Journal of luminescence 2001-02, Vol.92 (3), p.189-197 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Temperature-dependent line broadening measurements are reported for transitions on Sm
2+ and Eu
3+ (4f
6) and Eu
2+ and Gd
3+ (4f
7). Analysis of the results shows that the electron–phonon coupling parameter
α
̄
derived from a fit of the line width data to a two-phonon Raman dephasing process are similar for the divalent and trivalent lanthanides. The low energy of the opposite parity 4f
n−1
5d
1 state for the divalent lanthanides does not result in a significant difference in temperature-dependent line broadening. This indicates that an extrinsic Raman two-phonon dephasing process involving an opposite parity intermediate state is not responsible for the observed line broadening. |
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ISSN: | 0022-2313 1872-7883 |
DOI: | 10.1016/S0022-2313(00)00257-X |