The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD

The growth of Si-doped GaN films was performed by MOCVD using a homemade reactor operating at atmospheric pressure on (0 0 0 1) oriented sapphire. A study of the effect of Si-doping indicated that the intensity of yellow band emission in GaN : Si films decreased with the increasing of SiH 4/TMGa rat...

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Bibliographic Details
Published in:Journal of luminescence 2001-08, Vol.93 (4), p.321-326
Main Authors: Li, Shuti, Mo, Chunlan, Wang, Li, Xiong, Chuanbing, Peng, Xuexin, Jiang, Fengyi, Deng, Zhenbo, Gong, Dawei
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
GaN
Hall mobility
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
MOCVD
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Si-doping
Structure of solids and liquids
crystallography
X-ray diffraction
Yellow luminescence
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Summary:The growth of Si-doped GaN films was performed by MOCVD using a homemade reactor operating at atmospheric pressure on (0 0 0 1) oriented sapphire. A study of the effect of Si-doping indicated that the intensity of yellow band emission in GaN : Si films decreased with the increasing of SiH 4/TMGa ratio, and it was largely influenced by the parasitic reactions in the gas phase. The yellow band intensity was depressed when the parasitic reactions were reduced. We also observed that the growth rate of GaN : Si films was influenced by the Si doping and the parasitic reactions. The growth rate decreased with the increase of SiH 4/TMGa ratio and was larger in larger parasitic reactions reactor. Si-doped GaN films with carrier concentration of 2×10 19 cm −3, electron mobility of 120 cm 2/V s, FWHM of the band-edge emission of only 60 meV at room temperature, and no yellow emission were obtained.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(01)00206-X