Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se

We present photoluminescence (PL) studies of Cl-doped Zn 1− x Be x Se ( x=0–0.029) alloys performed in wide ranges of temperature (10– 296 K ) and of excitation intensities. We show that the high-temperature PL is characterized by a free-to-acceptor-type transition, involving shallow state of the lo...

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Bibliographic Details
Published in:Journal of luminescence 2003-06, Vol.104 (1), p.77-83
Main Authors: Gu, Y., Kuskovsky, Igor L., Neumark, G.F., Zhou, X., Maksimov, O., Guo, S.P., Tamargo, M.C.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Free-to-acceptor photoluminescence
Ii-vi semiconductors
MBE
n-Type
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
ZnBeSe
ZnSe
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Summary:We present photoluminescence (PL) studies of Cl-doped Zn 1− x Be x Se ( x=0–0.029) alloys performed in wide ranges of temperature (10– 296 K ) and of excitation intensities. We show that the high-temperature PL is characterized by a free-to-acceptor-type transition, involving shallow state of the localized holes. We shall show that similar transitions are also present in comparable undoped samples, but the PL intensity is substantially lower. Finally, we show that the ionization energy of the relevant acceptor-like species increases with Be concentration, suggesting an effective mass type defect.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(02)00666-X