Luminescence and microstructure of Ga, In and Tl centres in laboratory-doped natural feldspars

The doping of feldspars by Ga, In and Tl leads to the appearance of intense specific emission bands. Their spectra and decay kinetics were measured at 4–290 K in 2–8 eV spectral range. The lowest excited state of the impurity centre proves to be related to the excited 3P state of corresponding ns 2...

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Bibliographic Details
Published in:Journal of luminescence 1997-06, Vol.72, p.681-683
Main Authors: Jaek, I., Hütt, G., Vasilchenko, E., Nagirnyi, V., Zazubovich, S., Seeman, V.
Format: Article
Language:English
Subjects:
Alkali feldspars
Impurity centres
ns 2 ion
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Summary:The doping of feldspars by Ga, In and Tl leads to the appearance of intense specific emission bands. Their spectra and decay kinetics were measured at 4–290 K in 2–8 eV spectral range. The lowest excited state of the impurity centre proves to be related to the excited 3P state of corresponding ns 2 ion. This is the reason for the long decay times (~ 10 −3 − 10 −4 s at 4 K), sharply depending on temperature. The higher excited states of the centres apparently are the activator-oxygen hybrid states. Monovalent ns 2 ions possibly substitute Na + or K +ions in the K(Na)AlSi 3O 8 lattice. As follows from the lattice structure of alkali feldspars, they can have several different types of nearest neighbours.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(96)00264-5