Photoluminescence of CdTe/CdMnTe multiple quantum wells excited near the Mott transition

Using pulses from a 6 ns dye laser, the photoluminescence from CdTe/CdMnTe quantum wells is investigated as a function of carrier density. The spectra broaden with density but many sharp features remain. A biexciton is identified with a transition energy of 3.8meV less than that of the free exciton....

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Bibliographic Details
Published in:Journal of luminescence 1997-12, Vol.75 (4), p.269-275
Main Authors: Cain, N., O'Neill, M., Nicholls, J.E., Stirner, T., Hagston, W.E., Ashenford, D.E.
Format: Article
Language:English
Subjects:
Biexcitons
II-VI semiconductors
Mott transition
Photoluminescence
Quantum wells
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Summary:Using pulses from a 6 ns dye laser, the photoluminescence from CdTe/CdMnTe quantum wells is investigated as a function of carrier density. The spectra broaden with density but many sharp features remain. A biexciton is identified with a transition energy of 3.8meV less than that of the free exciton. The Mott transition for the el-hl bandedge is approached at an excitation density of 2.2 × 1012 cm−2. Photoluminescence from the el-h3 exciton is observed as a sharp peak at high densities. Its transition energy does not change and its intensity increases linearly with carrier density.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(97)00135-X