Er-doped edge emitting devices with a SiGe waveguide

Er-doped Si edge emitting devices have been fabricated using layer structures grown by molecular beam epitaxy (MBE). Both oxygen and carbon were used as co-dopant in the Er-doped layer. In order to achieve a waveguiding effect, a SiGe layer has been placed next to the Er-doped layer. Intense electro...

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Bibliographic Details
Published in:Journal of luminescence 1998-12, Vol.80 (1), p.329-333
Main Authors: Du, Chun-Xia, Ni, Wei-Xin, Joelsson, Kenneth B, Duteil, Fabrice, Hansson, Göran V
Format: Article
Language:English
Subjects:
Applied sciences
Electroluminescence
Electronics
Exact sciences and technology
Light emitting diode
Light-emitting devices
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe
Waveguide
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Summary:Er-doped Si edge emitting devices have been fabricated using layer structures grown by molecular beam epitaxy (MBE). Both oxygen and carbon were used as co-dopant in the Er-doped layer. In order to achieve a waveguiding effect, a SiGe layer has been placed next to the Er-doped layer. Intense electroluminescence (EL) at 1.54 μm has been observed from edge emission of such a device at room temperature and even up to 50°C at low excitation power under reverse bias. The value of an activation energy (125 meV) for dominating luminescence intensity quenching, as derived from temperature-dependent EL measurements, was 30 meV lower than that observed from our previous Er/O-doped structures (∼155 meV), which is likely caused by the band gap narrowing induced by C-doping. The estimated external quantum efficiency of these Er-doped Si edge emitting LEDs is ∼5×10 −5 at room temperature.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(98)00120-3