Phonon-enhanced intraband transitions in InAs self-assembled quantum dots

Phonon-mediated intraband carrier relaxation was studied in InAs/GaAs self-assembled quantum dots (QDs) by combining resonant photoluminescence and photoluminescence excitation experiments with high spectral resolution. The phonon-related resonances were found to dominate both the luminescence and e...

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Bibliographic Details
Published in:Journal of luminescence 2000-05, Vol.87, p.503-505
Main Authors: Baranov, A.V, Davydov, V, Ren, H.-W, Sugou, S, Masumoto, Y
Format: Article
Language:English
Subjects:
Carrier relaxation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
InAs
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Phonon
Physics
Quantum dots
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Summary:Phonon-mediated intraband carrier relaxation was studied in InAs/GaAs self-assembled quantum dots (QDs) by combining resonant photoluminescence and photoluminescence excitation experiments with high spectral resolution. The phonon-related resonances were found to dominate both the luminescence and excitation spectra. Spectral widths of 1LO-phonon peaks are surprisingly small and comparable with the inverse lifetime of the LO phonons in QDs, whereas, the multiphonon resonances are much broader most likely reflecting the width of n-phonon density of states.
ISSN:0022-2313
1872-7883
DOI:10.1016/S0022-2313(99)00225-2