Effect of the microstructure on the electronic transport in hydrogenated microcrystalline silicon

Undoped hydrogenated amorphous silicon layers deposited at different values of very high frequency (VHF) powers and silane to hydrogen dilution ratios possess various types of microstructures. Transport and defect measurements on layers suggest that structural properties (e.g., crystallite shape and...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 2002-04, Vol.299, p.390-394
Main Authors: Wyrsch, N, Droz, C, Feitknecht, L, Torres, P, Vallat-Sauvain, E, Bailat, J, Shah, A
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Undoped hydrogenated amorphous silicon layers deposited at different values of very high frequency (VHF) powers and silane to hydrogen dilution ratios possess various types of microstructures. Transport and defect measurements on layers suggest that structural properties (e.g., crystallite shape and size) do not significantly affect electronic properties. The latter depend mostly on defect density and on the Fermi level. The authors therefore suggest using the `quality parameter' μ 0 τ 0 for an unambiguous comparison between different μc-Si:H layers. Transport characterisation techniques in the direction perpendicular to the substrate and cell performance results corroborate the minor effect of microstructure on the bulk electronic transport properties.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(01)01013-4