Observation of a pseudogap in α-AlMnSi by break-junction tunneling spectroscopy

Tunneling spectroscopy studies of an α-Al 9Mn 1.8Si 2 single crystal were made at 4.2 K with the break-junction technique. A narrow dip at zero bias ( V=0) with peaks on both sides was observed in the spectrum, which corresponds to a pseudogap of 25 meV in the density of states. The dense set of sha...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2002-10, Vol.312, p.513-516
Main Authors: Okada, J.Tamura, Ekino, T., Takasaki, T., Yokoyama, Y., Watanabe, Y., Fujii, H., Nanao, S.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metals. Metallurgy
Physics
Rare earth metals and alloys
Tunneling
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Summary:Tunneling spectroscopy studies of an α-Al 9Mn 1.8Si 2 single crystal were made at 4.2 K with the break-junction technique. A narrow dip at zero bias ( V=0) with peaks on both sides was observed in the spectrum, which corresponds to a pseudogap of 25 meV in the density of states. The dense set of sharp spikes predicted by the band calculations for the crystal was not observed.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(02)01734-9