Deposition of silicon-germanium alloys under plasma modulation conditions

Plasma deposition of a-Si,Ge:H,F films from SiF 4-GeH 4-H 2 mixture, has been investigated by applying a square wave modulation to the r.f. field. The effects of plasma modulation on the thickness and compositional uniformity and on the increase of Ge and H incorporation in the film are reported. A...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1991, Vol.137, p.753-756
Main Authors: Bruno, G., Capezzuto, P., Losurdo, M., Manodoro, P., Cicala, G.
Format: Article
Language:English
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Summary:Plasma deposition of a-Si,Ge:H,F films from SiF 4-GeH 4-H 2 mixture, has been investigated by applying a square wave modulation to the r.f. field. The effects of plasma modulation on the thickness and compositional uniformity and on the increase of Ge and H incorporation in the film are reported. A two-phases model for the conduction mechanism is preliminarily discussed.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(05)80230-3