Amorphous silicon double stacked solar cell using low band gap A-Si bottom cell

We have studied the preparation of low band gap hydrogenated amorphous silicon (a-Si:H) and the photovoltaic applications of this material. We obtained a-Si:H film with optical band gap of 1.60 eV at the substrtate temperature of 280°C and made solar cells using this material with single and double-...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1991, Vol.137, p.1161-1164
Main Authors: Kim, Tae Gon, Kim, Sung Chul, Jun, Jung Mok, Park, Kyu Chang, Koh, Sung-Ok, Han, Min-Koo, Jang, Jin
Format: Article
Language:English
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Summary:We have studied the preparation of low band gap hydrogenated amorphous silicon (a-Si:H) and the photovoltaic applications of this material. We obtained a-Si:H film with optical band gap of 1.60 eV at the substrtate temperature of 280°C and made solar cells using this material with single and double-stacked structures. The optical gaps for top and bottom i-layers of the stacked solar cells are 1.78 and 1.60 eV, respectively. Both cells show high stability against long light illumination.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(05)80329-1