High resolution optical recording on a-Si films

The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irra...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1991, Vol.137, p.1297-1300
Main Authors: Gotchiyaev, V.Z., Korolkov, V.P., Sokolov, A.P., Chernukhin, V.P.
Format: Article
Language:English
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Summary:The changes in optical properties and structure of a-Si films under laser annealing and spatial resolution of optical recording has been studied. The mechanism of the observed changes is discussed. The spatial resolution of up to 2000 lines/mm has been obtained. The difference of solubility for irradiated and nonirradiated regions of the samples has been observed. It is shown that the optical recording on a-Si films is promising for producing of half-tone photomasks of kinofom optical elements.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(05)80361-8