Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods

A detailed comparison between transient junction photocurrent and photocapacitance spectra can be used to examine separately the majority and minority carrier processes in amorphous semiconductors. Such methods are employed both on intrinsic samples of hydrogenated amorphous silicon (a-Si:H) and als...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1992, Vol.141 (1-3), p.142-154
Main Authors: Cohen, J. David, Unold, Thomas, Gelatos, Avgerinos V., Fortmann, Charles M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:A detailed comparison between transient junction photocurrent and photocapacitance spectra can be used to examine separately the majority and minority carrier processes in amorphous semiconductors. Such methods are employed both on intrinsic samples of hydrogenated amorphous silicon (a-Si:H) and also amorphous silicon-germanium alloys (a-Si, Ge:H) with a Tauc gap near 1.3 eV. It is demonstrated how this method can be used not only to map out the deep defect distribution in such samples, but also to determine the effective μτ products for the minority carrier motion.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(05)80528-9