Study of the deep-states density by time-resolved transient photocurrent measurements

The post-transit photocurrent analysis has been used to study the density of states (DOS) in the gap of intrinsic and p-doped amorphous silicon. The DOS deduced from the current transients measured at various temperatures shows an unexpected time dependance, which suggests a deviation of the transpo...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1992, Vol.141 (1-3), p.155-161
Main Authors: Nesládek, M., Tříska, A., Adriaenssens, G.J.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Physics
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Summary:The post-transit photocurrent analysis has been used to study the density of states (DOS) in the gap of intrinsic and p-doped amorphous silicon. The DOS deduced from the current transients measured at various temperatures shows an unexpected time dependance, which suggests a deviation of the transport mechanism from the trap-limited band transport model. To explain this deviation, a new model is proposed which takes account of deep retrapping and/or a change of the release process from the original one to direct hopping-assisted release from deep states to an intermediate energy level. Low-temperature drift mobility data for the hole transport are also presented and they are discussed with respect to the phonon-assisted hopping mechanism.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(05)80529-0