Meyer-neldel rule in undoped a-Si:H, examined by tm-sclc method

The preexponential factor σ O of the electrical conductivity as a function of its activation energy E a (so called Meyer-Neldel rule) has been studied at room temperature on undoped a-Si:H by means of the temperature modulated space-charge-limited-current (TM-SCLC) method in an annealed state A and...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1987-02, Vol.90 (1), p.179-182
Main Authors: Kocka, Jan, Schauer, František
Format: Article
Language:English
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Summary:The preexponential factor σ O of the electrical conductivity as a function of its activation energy E a (so called Meyer-Neldel rule) has been studied at room temperature on undoped a-Si:H by means of the temperature modulated space-charge-limited-current (TM-SCLC) method in an annealed state A and after prolonged illumination (state B). With the increasing illumination time two different processes are observed. In an annealed and lightly illuminated state, σ o versus E a dependence cannot be described by a single Meyer-Neldel coefficient G, but exhibits the change of the slope at about E a≈0.6 eV, from G ≈ 10 eV −1 (for E a0.6 eV) to G≈25 eV −1.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(87)80408-8