Calorimetric investigation of structural processes in porous silicon

In this paper, differential scanning calorimetry (DSC) measurements for investigation of microstructure of porous silicon (PS) are described. The DSC curves for all samples present one exothermic peak, Q1, within a temperature range 225–325°C and two endothermic peaks with maxima at ∼ 380°C and ∼ 46...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1996-09, Vol.204 (2), p.169-171
Main Authors: Budaguan, Boris G., Aivazov, Arcady A., Sazonov, Andrei Yu
Format: Article
Language:English
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Summary:In this paper, differential scanning calorimetry (DSC) measurements for investigation of microstructure of porous silicon (PS) are described. The DSC curves for all samples present one exothermic peak, Q1, within a temperature range 225–325°C and two endothermic peaks with maxima at ∼ 380°C and ∼ 465°C, respectively. The values of heat release and absorption at the various peaks have been determined. A difference between PS layers fabricated on 1 Ω cm (p−PS) and on 0.01 Ω cm (p+ PS) p-type Si substrates is observed. It is shown that the exothermic effect in PS can be considered to arise from relaxation of weak Si-Si bonds or defects located at internal surfaces. The endothermic effects may be connected with gas effusion at high temperatures.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(96)00403-6