Radiation-induced structural transformations in vitreous chalcogenide semiconductors

Radiation-induced structural transformations (RST) in vitreous As 2S 3-based chalcogenide semiconductors have been considered at the level of destruction–polymerization changes of covalent chemical bonds, associated with coordination defect (CD) formation processes. The whole variety of the CD has b...

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Bibliographic Details
Published in:Journal of non-crystalline solids 1998-01, Vol.227, p.723-727
Main Authors: Balitska, V.O, Shpotyuk, O.I
Format: Article
Language:English
Subjects:
Radiation-induced structural transformation
Semiconductors
Vitreous chalcogenide
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Summary:Radiation-induced structural transformations (RST) in vitreous As 2S 3-based chalcogenide semiconductors have been considered at the level of destruction–polymerization changes of covalent chemical bonds, associated with coordination defect (CD) formation processes. The whole variety of the CD has been taken into account to construct a physically real variant of the radiation-induced structural changes.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(98)00154-9