Model of the light-induced creation of two types of dangling bonds in a-Si:H

We present a new model of the light-induced creation of two types of dangling bonds in a-Si:H. The numerical calculation on the rate equation based on the model accounts for differences in the presence of two types of dangling bonds between high-quality samples and low-quality samples and also the o...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2000-05, Vol.266, p.410-414
Main Authors: Morigaki, K, Hikita, H
Format: Article
Language:English
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Summary:We present a new model of the light-induced creation of two types of dangling bonds in a-Si:H. The numerical calculation on the rate equation based on the model accounts for differences in the presence of two types of dangling bonds between high-quality samples and low-quality samples and also the observed kinetics of light-induced dangling bond densities in a-Si:H.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(99)00763-2