ICRF siliconization in HT-7 superconducting tokamak

A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectro...

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Bibliographic Details
Published in:Journal of nuclear materials 2001-03, Vol.290, p.1171-1175
Main Authors: Gong, Xiangzu, Li, Jiangang, Wan, Baonian, Zhao, Yanpin, Zhang, Xiaodong, Gu, Xuemao, Li, Chenfu, Zhen, Min, Jie, Yinxian, Zhang, Shouyin, Wu, Zhenwei
Format: Article
Language:English
Subjects:
Siliconization
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Summary:A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization.
ISSN:0022-3115
1873-4820
DOI:10.1016/S0022-3115(00)00552-3