Characterization of CdTe-In co-sputtered films

• Published in: The Journal of physics and chemistry of solids 1997-05, Vol.58 (5), p.807-811
• Main Authors: RamÍrez-Bon, R., Nuñez-López, R., Espinoza-Beltrán, F.J., Zelaya-Angel, O., González-Hernández, J.
• Format: Article
• Language: English
• Subjects: A. semiconductors; A. thin films; B. X-ray diffraction; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; D. electrical conductivity; D. phase transition; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Photoconduction and photovoltaic effects; Photoconduction and photovoltaic effects; photodielectric effects; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/S0022-3697(96)00179-5

CdTe-In films were grown on Corning glass substrates by means of the radio frequency sputtering deposition technique. The ternary alloys were produced by co-sputtering from a target containing CdTe and In. The In doping effect in CdTe is studied and the different kinds of compound materials that are formed when CdTe and In are mixed. Several kinds of materials are obtained depending on In concentration in the films and the substrate temperature during the deposition. The electrical and structural properties of the obtained materials are reported. The composition measurements by Auger electron spectroscopy show that In content in the films runs from 8 to 58 at.%, depending on the area fraction covered by the In piece glued onto the CdTe target. Low In concentration in the films grown at room temperature produces a low level of In doping in the CdTe cubic lattice. At higher In concentrations a crystalline structural transition to the CdTe hexagonal phase is observed in the films and then the formation of Cd-Te-In ternary structure is obtained. Ternary compound thin films of materials with composition on the pseudo-binary system CdTe In 2Te 3 can be prepared by this growth technique at high substrate temperatures.