Fabrication and characterization of nanocrystalline cobalt oxide thin films

• Published in: Materials research bulletin 2001, Vol.36 (1), p.161-170
• Main Authors: Pejova, Biljana, Isahi, Ardijana, Najdoski, Metodija, Grozdanov, Ivan
• Format: Article
• Language: English
• Subjects: A. Oxides; A. Semiconductors; A. Thin films; B. Crystal growth; C. X-ray diffraction; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Physics
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/S0025-5408(00)00479-7

A simple solution growth route has been employed to synthesize nanocrystalline cobalt oxide thin films on glass substrates. The obtained films were characterized by X-ray diffraction and FTIR spectroscopy. The as-deposited films were identified as a mixture of different phases of Co(OH) 2, while the annealed ones as Co 3O 4. The absorption of the annealed films gradually decreases with an increase of the wavelength in the 310–820 nm region. Upon annealing, the absorption coefficient decreases. The calculated band gap energy from optical absorption data for annealed films is 2.2 eV. The as-deposited thin films are dielectric, while the post-deposition heat-treated ones are characterized by resistivity of several MΩs/cm 2 at room temperature.