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Simulation of vertical merged MOS elements with optical power supply

Functional optoelectronic vertical merged MOS (OVMMOS) elements with optical power supply increasing the packaging density for advanced high-speed low-voltage low-power deep-submicron ULSI are considered. Two types of new OVVMOS logical elements are proposed, analyzed and simulated. The simple reduc...

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Bibliographic Details
Published in:Microelectronics 2002-11, Vol.33 (11), p.1021-1025
Main Authors: Bubennikov, Alexandre N, Rakitin, Vladimir V, Zykov, Andrey V
Format: Article
Language:English
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Summary:Functional optoelectronic vertical merged MOS (OVMMOS) elements with optical power supply increasing the packaging density for advanced high-speed low-voltage low-power deep-submicron ULSI are considered. Two types of new OVVMOS logical elements are proposed, analyzed and simulated. The simple reduced but adequate numerical electrical–optical model for the OVMMOS is formulated. Low-voltage low-power OVMMOS with combined channels for electrons and holes to increase integration level are simulated using two-dimensional (2D)-numerical device simulators. The problems of low light power operations and optimizations of OVMMOS elements are investigated using 2D simulators.
ISSN:1879-2391
1879-2391
DOI:10.1016/S0026-2692(02)00046-0