Air bridge and via hole technology for GaAs based microwave devices

This paper describes the process parameter dependence of air bridges and via holes of different dimensions for GaAs based microwave devices and ICs. Process conditions and technologically feasible optimum dimensions of the air bridges for circuit layout are suggested. A wet etching technique for the...

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Bibliographic Details
Published in:Microelectronics 1988-09, Vol.19 (5), p.23-27
Main Authors: Singh, J.K., Daga, O.P., Kothari, H.S., Singh, B.R., Khokle, W.S.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:This paper describes the process parameter dependence of air bridges and via holes of different dimensions for GaAs based microwave devices and ICs. Process conditions and technologically feasible optimum dimensions of the air bridges for circuit layout are suggested. A wet etching technique for the formation of extremely small (15×15 micron) via holes is also described.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/S0026-2692(88)80135-6