A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg= Vd

Hot-carrier degradation of n-MOSFETs at high gate voltages ( V g= V d) is examined. A new lifetime prediction method is developed based on the universal power law between the degradation of saturated drain current (d I dsat) and the product of the injected charge fluence times the gate current, whic...

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Bibliographic Details
Published in:Microelectronics and reliability 2001-11, Vol.41 (11), p.1909-1913
Main Authors: Mu, Fuchen, Xu, Mingzhen, Tan, Changhua, Duan, Xiaorong
Format: Article
Language:English
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Summary:Hot-carrier degradation of n-MOSFETs at high gate voltages ( V g= V d) is examined. A new lifetime prediction method is developed based on the universal power law between the degradation of saturated drain current (d I dsat) and the product of the injected charge fluence times the gate current, which is independent of gate or drain voltages. This method is applied to 4 and 5 nm n-MOSFETs and lifetimes are estimated under their operation conditions. It is applicable to n-MOSFETs with ultrathin gate oxides.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(01)00118-4