In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications

In this paper, an accelerated ageing experiment on GaAs MESFET's is presented applying a novel in-situ technique on a reduced time scale. The ageing behaviour of several dc parameters is monitored continuously while thermoelectrical stress is applied. As different ageing processes leave distinc...

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Bibliographic Details
Published in:Microelectronics and reliability 1997-10, Vol.37 (10), p.1655-1658
Main Authors: Petersen, R., de Ceuninck, W., de Schepper, L., Grégoris, G.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
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Summary:In this paper, an accelerated ageing experiment on GaAs MESFET's is presented applying a novel in-situ technique on a reduced time scale. The ageing behaviour of several dc parameters is monitored continuously while thermoelectrical stress is applied. As different ageing processes leave distinct fingerprints in the degradation curves, the increased measurement resolution and data density, which are typical for in-situ measurements, provide additional information compared with conventional ex-situ tests. The result of the numerical analysis of the experimental data is presented, which provide an initial basis for comparison with conventional data and lifetime prediction.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(97)00132-7