An investigation into electrical parameter settling times of GaAs FETs and MMICs

GaAs MMICs dedicated to space telecommunication payloads have now to work under high speed switching conditions together with the classical continuous microwave operation. Thus, both microwave and ⪡digital-relatedd⪢ limitations of these MMICs have been investigated under a system approach. Trapping...

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Bibliographic Details
Published in:Microelectronics and reliability 1997-10, Vol.37 (10), p.1687-1690
Main Authors: Coppel, F., Dumas, J.M., Cazaux, J.L.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Testing, measurement, noise and reliability
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Summary:GaAs MMICs dedicated to space telecommunication payloads have now to work under high speed switching conditions together with the classical continuous microwave operation. Thus, both microwave and ⪡digital-relatedd⪢ limitations of these MMICs have been investigated under a system approach. Trapping mechanisms have been evidenced as the physical origin of microwave parameter settling times during switching between microwave operations. A satisfactory fabrication process was then selected.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(97)00140-6