Impurity-related emission in the photoluminescence from p-type modulation doped Al1-xGaxAs/GaAs heterostructures

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Bibliographic Details
Published in:Solid state communications 2002-01, Vol.122 (7-8), p.379-384
Main Authors: BRYJA, L, KUBISA, M, RYCZKO, K, MISIEWICZ, J, LARIONOV, A, BAYER, M, FORCHEL, A, SORENSEN, C. B
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Iii-v semiconductors
Impurity and defect levels
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(02)00134-5