Hybrid ferromagnetic/semiconductor heterostructures for spintronics

Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study ‘hybrid’ ferromagnetic/semiconductor heterostructures that combine conven...

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Bibliographic Details
Published in:Solid state communications 2003-07, Vol.127 (2), p.173-179
Main Authors: Samarth, N, Chun, S.H, Ku, K.C, Potashnik, S.J, Schiffer, P
Format: Article
Language:English
Subjects:
A. Ferromagnetic semiconductor
B. Spintronics
C. Heterostructure
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Summary:Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study ‘hybrid’ ferromagnetic/semiconductor heterostructures that combine conventional III–V and II–VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(03)00340-5