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Memory effect in ferroelectric-semiconductor with incommensurate phase TlGase2

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Bibliographic Details
Published in:Solid state communications 2003-10, Vol.128 (1), p.25-28
Main Authors: ALIYEV, V. P, BABAYEV, S. S, MAMMADOV, T. G, YU SEYIDOV, Mir-Hasan, SULEYMANOV, R. A
Format: Article
Language:English
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ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(03)00619-7