Low temperature photoluminescence properties of InGaN films grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 substrates by low pressure MOVPE

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Bibliographic Details
Published in:Solid state communications 1997-05, Vol.102 (5), p.405-408
Main Authors: Yuzhen, Tong, Guoyi, Zhang, Sixuan, Jin, Zhijian, Yang, Xiaozhong, Dang, Shumin, Wang
Format: Article
Language:English
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ISSN:0038-1098
DOI:10.1016/S0038-1098(97)00006-9