Inelastic hot electron scattering by neutral acceptors in [formula omitted] multiple quantum well structures

We have studied inelastic hot electron scattering due to interaction with neutral acceptors accompanied by their excitation and ionization. Comparative studies of narrow GaAs AlAs multiple quantum wells and bulk GaAs films were performed in the concentration range of neutral acceptors 10 18–10 19 cm...

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Bibliographic Details
Published in:Solid state communications 1997-07, Vol.103 (3), p.151-154
Main Authors: Reshina, I.I., Mirlin, D.N., Perel, V.I., Dobin, A.Yu, Agranov, A.G., Ber, B.Ya
Format: Article
Language:English
Subjects:
A. quantum wells
D. optical properties
E. luminescence
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Summary:We have studied inelastic hot electron scattering due to interaction with neutral acceptors accompanied by their excitation and ionization. Comparative studies of narrow GaAs AlAs multiple quantum wells and bulk GaAs films were performed in the concentration range of neutral acceptors 10 18–10 19 cm −3. The method of hot photoluminescence depolarization in an applied magnetic field was utilized. The scattering cross-section in multiple quantum wells was shown to be four times smaller than in the bulk samples. A theoretical model of hot electron scattering by acceptors in a quantum well is developed that explains satisfactorily the experimental results.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(97)00179-8