LO-phonon sideband photoluminescence in pure GaAs

The LO-phonon sidebands of the photoluminescence in pure bulk GaAs are investigated as a function of excitation energy, intensity and also of the lattice and (hot) electron temperatures. The analysis shows that the exciton distribution at photoexcitation below the band gap can be characterized by a...

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Bibliographic Details
Published in:Solid state communications 1998-04, Vol.106 (2), p.73-76
Main Authors: Kozhevnikov, M., Ashkinadze, B.M., Cohen, E., Ron, Arza
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. electron-phonon interaction
E. luminescence
Electron states
Exact sciences and technology
Excitons and related phenomena
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:The LO-phonon sidebands of the photoluminescence in pure bulk GaAs are investigated as a function of excitation energy, intensity and also of the lattice and (hot) electron temperatures. The analysis shows that the exciton distribution at photoexcitation below the band gap can be characterized by a temperature which is very close to the bath temperature down to 2 K. In the case of above-bandgap excitation or under microwave irradiation, the exciton temperature is higher than that of the lattice as a result of exciton-electron scattering.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(97)10250-2