Non trivial behaviour of the photoluminescence transition intensities in a modulation doped GaAs/GaAlAs single quantum well in tilted magnetic field

• Published in: Solid state communications 1998-05, Vol.106 (5), p.263-268, Article 2638
• Main Authors: Couzinet, B., Dyakonov, M., Raymond, A., Elmezouar, I., Kamal-Saadi, M., Etienne, B.
• Format: Article
• Language: English
• Subjects: A. quantum wells; A. semiconductors; Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. galvanomagnetic effects; D. optical properties; Exact sciences and technology; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Photoluminescence; Physics
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/S0038-1098(98)00026-X

We have studied the effects of a tilted magnetic field on the magneto-photoluminescence intensities in a GaAs/GaAlAs modulation doped single quantum well. For small tilt angles, the parallel component of the magnetic field induces an increase of the intensities of the Δn = 0 Landau level transitions with n ≥ 1. For higher angles, we observe new transitions very close to the ones with Δn = 0. We attribute this non trivial behaviour of the intensity to the modification of selection rules due to the mixing between the cyclotron and the subband motion of electrons, caused by the parallel component of the magnetic field. We calculate the transition intensities and compare the theoretical predictions with our experimental results.