The coupling between quasilocalized states in semiconductor double quantum barriers

The interaction between above-barrier states quasilocalized in barrier layers was studied in a double quantum barrier configuration. Optical transmission experiments were performed on type- II CdSe/ZnTe samples, in which the valence band has a double-barrier structure. Numerical studies reveal a cha...

Full description

Saved in:
Bibliographic Details
Published in:Solid state communications 1998, Vol.107 (4), p.177-181
Main Authors: Lee, E.H., Stoltz, S., Chang, H.C., Na, M.H., Luo, H., Petrou, A.
Format: Article
Language:English
Subjects:
A. quantum wells
A. semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
E. light absorption and reflection
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The interaction between above-barrier states quasilocalized in barrier layers was studied in a double quantum barrier configuration. Optical transmission experiments were performed on type- II CdSe/ZnTe samples, in which the valence band has a double-barrier structure. Numerical studies reveal a change of symmetry for the coupled quasilocalized states, as a function of the separation between the two barriers. Consequently, the strongest optical transition occurs between different pairs of states as the barrier separation changes. The behavior is illustrated by both experimental and numerical results.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(98)00185-9