Effective masses of wurtzite GaN calculated from an empirical tight binding model

The energy band structure of wurtzite GaN is calculated using an sp 3d 5 - sp 3 empirical tight-binding method (ETBM) that includes the spin-orbit interaction. The model incorporates all nearest-neighbor and some second-nearest neighbor interactions within the two-center approximation. The second-ne...

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Bibliographic Details
Published in:Solid state communications 1998-01, Vol.107 (7), p.345-348
Main Author: Jogai, B.
Format: Article
Language:English
Subjects:
A. semiconductors
A. thin films
Condensed matter: electronic structure, electrical, magnetic, and optical properties
D. electronic band structure
D. spin-orbit effects
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Fermi surface: calculations and measurements
effective mass, g factor
Methods of electronic structure calculations
Physics
Semiconductor compounds
Theories and models of many electron systems
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Summary:The energy band structure of wurtzite GaN is calculated using an sp 3d 5 - sp 3 empirical tight-binding method (ETBM) that includes the spin-orbit interaction. The model incorporates all nearest-neighbor and some second-nearest neighbor interactions within the two-center approximation. The second-nearest neighbor interactions excluded are the cation-cation interactions involving the Ga 3 d orbital. The effective masses of the conduction and A, B, and C valence bands have been calculated and found to be in good agreement with published experimental data.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(98)00220-8