Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor

The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a tr...

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Bibliographic Details
Published in:Solid-state electronics 2000-11, Vol.44 (11), p.2069-2075
Main Authors: Yu, Kuo-Hui, Chang, Wen-Lung, Feng, Shun-Ching, Liu, Wen-Chau
Format: Article
Language:English
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Summary:The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(00)00172-6