Measurement and simulation of boron diffusion in strained Si1−xGex epitaxial layers with a linearly graded germanium profile

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Bibliographic Details
Published in:Solid-state electronics 2001-11, Vol.45 (11), p.1879-1884
Main Authors: Rajendran, K., Schoenmaker, W.
Format: Article
Language:English
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ISSN:0038-1101
DOI:10.1016/S0038-1101(01)00227-1