Monte Carlo simulation of electron mobility in silicon-on-insulator structures

A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition,...

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Bibliographic Details
Published in:Solid-state electronics 2002-11, Vol.46 (11), p.1715-1721
Main Authors: Gámiz, F, Roldán, J.B, López-Villanueva, J.A, Cartujo-Cassinello, P, Jiménez-Molinos, F
Format: Article
Language:English
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Summary:A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00149-1