Carrier mobility model for GaN

Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T⩽1000 K) and concentration (10 14⩽ N⩽10 19 cm −3) ranges. The dependence of the temperature T m at which the mobil...

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Bibliographic Details
Published in:Solid-state electronics 2003, Vol.47 (1), p.111-115
Main Authors: Mnatsakanov, Tigran T, Levinshtein, Michael E, Pomortseva, Lubov I, Yurkov, Sergey N, Simin, Grigory S, Asif Khan, M
Format: Article
Language:English
Subjects:
Gallium nitride
Low-field mobility
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Summary:Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50⩽ T⩽1000 K) and concentration (10 14⩽ N⩽10 19 cm −3) ranges. The dependence of the temperature T m at which the mobility μ is at a maximum on the doping level is also obtained. Results obtained can be directly used for computer simulation of GaN-based devices.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00256-3