Modeling of kink effect in polysilicon thin film transistor using charge sheet approach

A current–voltage model based on the charge sheet approach in post saturation that includes the “kink effect” for polycrystalline silicon thin film transistor is presented. To explain the kink effect, the increase in the channel charge density due to the impact ionization caused by the high electric...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 2003-04, Vol.47 (4), p.645-651
Main Authors: Bindra, Simrata, Haldar, Subhasis, Gupta, R.S.
Format: Article
Language:English
Subjects:
Charge sheet approach
Grain size
Kink effect
Poly-Si TFT
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A current–voltage model based on the charge sheet approach in post saturation that includes the “kink effect” for polycrystalline silicon thin film transistor is presented. To explain the kink effect, the increase in the channel charge density due to the impact ionization caused by the high electric field in the pinch-off region near the drain is evaluated. The charge density thus obtained is used to obtain the drain current in the post saturation and the results are matched with the experimental data, showing good agreement.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00337-4