Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructures

We fabricated selective photodetectors on the basis of graded-gap GaAlAs/GaAs heterostructures and quantum-confined GaInN/GaN structures. At λ= λ max the monochromatic photosensitivity is in the range of 0.1–0.7 A/W (GaAlAs/GaAs), 0.15 A/W (GaInN/GaN). The methods are developed for control over the...

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Bibliographic Details
Published in:Solid-state electronics 2003-03, Vol.47 (3), p.583-587
Main Authors: Sukach, G.A., Smertenko, P.S., Shepel, L.G., Ciach, R., Kuzma, M.
Format: Article
Language:English
Subjects:
Heterostructure
III–V semiconductor
Photodetector
Spectral sensitivity
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Summary:We fabricated selective photodetectors on the basis of graded-gap GaAlAs/GaAs heterostructures and quantum-confined GaInN/GaN structures. At λ= λ max the monochromatic photosensitivity is in the range of 0.1–0.7 A/W (GaAlAs/GaAs), 0.15 A/W (GaInN/GaN). The methods are developed for control over the photosensitivity band width and its energy position in the 0.35–1.1 μm by varying technological factors (such as gap gradient, spacing between the metallurgical boundary and p–n junction, minority charge carrier diffusion length).
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00418-5