Modeling and design of the high performance step SOI-LIGBT power devices by partition mid-point method

In this paper, a partition method is proposed to study the high voltage devices with the step doping profile for the first time. It has been proposed that its breakdown voltage can be approached to that of the linearly graded devices with similar forward voltage drop ( V ce). In addition, by this me...

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Bibliographic Details
Published in:Solid-state electronics 2003-10, Vol.47 (10), p.1693-1698
Main Authors: Chang, Fang-Long, Lin, Ming-Jang, Lee, Gwo-Yann, Chen, Young-Shying, Liaw, C.W., Cheng, Huang-Chung
Format: Article
Language:English
Subjects:
Linearly graded doping
SOI-LIGBT
Step drift doping profile
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Summary:In this paper, a partition method is proposed to study the high voltage devices with the step doping profile for the first time. It has been proposed that its breakdown voltage can be approached to that of the linearly graded devices with similar forward voltage drop ( V ce). In addition, by this method, the breakdown voltage can be deduced and its corresponding issue location is also fingered out in the step drift region. Furthermore, in order to reduce the undesirable additional masks, the degraded factor ( D) is developed to obtain better performance with the least number of frames. Eventually, a 660 V step analytical results are compared with a 606.6 V MEDICI simulation and this shows that the partition method is very effective.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(03)00143-6