An equivalent heterojunction-like model for polysilicon emitter bipolar transistor

A new method was presented in this article to explain high current gain of polysilicon emitter transistor. By regarding interfacial oxide between polysilicon emitter and silicon emitter as a wide band gap material which can limit minority transport from silicon to polysilicon, thus improve emitter i...

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Bibliographic Details
Published in:Solid-state electronics 2003-10, Vol.47 (10), p.1719-1727
Main Authors: Jin, Hai-Yan, Zhang, Li-Chun, Gao, Yu-Zhi, Ye, Hong-Fei
Format: Article
Language:English
Subjects:
Band gap
Heterojunction-like
HF transistor
RCA transistor
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Summary:A new method was presented in this article to explain high current gain of polysilicon emitter transistor. By regarding interfacial oxide between polysilicon emitter and silicon emitter as a wide band gap material which can limit minority transport from silicon to polysilicon, thus improve emitter injection efficiency and increase current gain, the characteristics of RCA transistor (a ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) can be explained expediently. The theory also applied to HF transistor by treating difference band gap Δ E g between interfacial material and silicon as zero. Comparison between experimental and theoretical results was made and they are accordant. Through equivalent model Δ E g of a RCA transistor can be estimated as 101 meV.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(03)00153-9