Hyperabrupt epitaxial tuning diodes

Theory, fabrication and testing of voltage-variable, tuning diode structures was performed yielding close comparisons of this theory with experiment. Six distinct diode voltage-capacitance characteristics of the form C = KV −m were fabricated using precise and accurate computer control of the epitax...

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Bibliographic Details
Published in:Solid-state electronics 1977, Vol.20 (6), p.485-490
Main Authors: Jackson, Don M., DeMassa, Thomas A.
Format: Article
Language:English
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Summary:Theory, fabrication and testing of voltage-variable, tuning diode structures was performed yielding close comparisons of this theory with experiment. Six distinct diode voltage-capacitance characteristics of the form C = KV −m were fabricated using precise and accurate computer control of the epitaxial layer structure.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(77)81004-6