A study of carrier-trap generation by Fowler-Nordheim tunneling stress on polycrystalline-silicon/SiO2/silicon structures

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Bibliographic Details
Published in:Solid-state electronics 1997-01, Vol.41 (1), p.41-46
Main Authors: Jiang, J., Awadelkarim, O.O., Chan, Y.D.
Format: Article
Language:English
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ISSN:0038-1101
DOI:10.1016/S0038-1101(96)00129-3