Static model of single heterojunction acoustic charge transfer structures

Numerical studies are reported of possible epitaxial layer structures for an acoustic charge transfer device in which charge confinement is provided by a single heterojunction. These devices have been modelled to find structures providing adequate charge confinement and minimal background charge. To...

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Bibliographic Details
Published in:Solid-state electronics 1997-04, Vol.41 (4), p.553-559
Main Authors: Hayden, R.K, Woods, R.C
Format: Article
Language:English
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Summary:Numerical studies are reported of possible epitaxial layer structures for an acoustic charge transfer device in which charge confinement is provided by a single heterojunction. These devices have been modelled to find structures providing adequate charge confinement and minimal background charge. To avoid parasitic signals at the frequency of the surface acoustic wave, it is found necessary to strike a compromise between minimising the charge in the accumulation layer at the heterojunction interface and maximising the charge binding energy. The level of the parasitic signal obtained using a single heterojunction acoustic charge transfer device is compared with that obtained using a quantum well acoustic charge transfer device.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(96)00149-9