High temperature annealing of GaN, InN, AlN and related alloys

Transient thermal processing is employed for implant activation, contact alloying, implant isolation and dehydrogenation during III-nitride device fabrication. We have compared use of InN and AlN powder as methods for providing a N 2 partial pressure within a graphite susceptor for high temperature...

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Bibliographic Details
Published in:Solid-state electronics 1997-05, Vol.41 (5), p.681-694
Main Authors: Hong, J, Lee, J.W, Vartuli, C.B, Mackenzie, J.D, Donovan, S.M, Abernathy, C.R, Crockett, R.V, Pearton, S.J, Zolper, J.C, Ren, F
Format: Article
Language:English
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Summary:Transient thermal processing is employed for implant activation, contact alloying, implant isolation and dehydrogenation during III-nitride device fabrication. We have compared use of InN and AlN powder as methods for providing a N 2 partial pressure within a graphite susceptor for high temperature annealing of GaN, InN AlN, InAlN and InGaN. The AlN powder provides adequate surface protection to temperatures of ∼ 1100°C for AlN, ≥ 1050°C for GaN, ∼ 600°C for InN and ∼ 800°C for the ternary alloys. While the InN powder provides a higher N 2 partial pressure than AlN powder, at temperatures above ∼ 750°C the evaporation of In is sufficiently high to produce condensation of In droplets on the surfaces of the annealed samples.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(96)00219-5