Analytical model for abrupt HBTs with application to [formula omitted] type

Heterojunction bipolar transistors fabricated using an InP InGaAs configuration show a high performance. In order to understand the physical mechanisms which control the behaviour of the above transistors, an analytical model was developed that takes into account Fermi-Dirac statistics as well as an...

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Bibliographic Details
Published in:Solid-state electronics 1997-09, Vol.41 (9), p.1277-1283
Main Authors: López-González, Juan M., Garcias-Salvà, Pau, Prat, Lluís
Format: Article
Language:English
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Summary:Heterojunction bipolar transistors fabricated using an InP InGaAs configuration show a high performance. In order to understand the physical mechanisms which control the behaviour of the above transistors, an analytical model was developed that takes into account Fermi-Dirac statistics as well as an arbitrary injection level. This general model is simplified in several levels of approximation, thus obtaining a very simple model that enables a clear physical interpretation of the collector current behaviour.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(97)00067-1