InP-based DHBT with 90% power-added efficiency and 1 W output power at 2 GHZ

We report the growth, fabrication and power performance at 2 GHz of a novel InP-based DHBT. We demonstrate that the conduction band-edge discontinuity between the InGaAs base and the InP can be eliminated by bandgap engineering the base-collector junction. As a result, we fully exploit the advantage...

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Bibliographic Details
Published in:Solid-state electronics 1997-10, Vol.41 (10), p.1681-1686
Main Authors: Liu, Takyiu, Chen, Mary, Nguyen, Chanh, Virk, Robinder
Format: Article
Language:English
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Summary:We report the growth, fabrication and power performance at 2 GHz of a novel InP-based DHBT. We demonstrate that the conduction band-edge discontinuity between the InGaAs base and the InP can be eliminated by bandgap engineering the base-collector junction. As a result, we fully exploit the advantages of InP for the collector for high breakdown voltage as well as high gain. For class C operation peak PAE of 90% with an output power of 1200 mW at a power density of 2.0 mW μm −2 was achieved.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(97)00123-8